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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.2 www.infineon.com 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt lowswitchinglossesigbtinhighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelemittercontrolleddiode features: highspeedh3technologyoffers: ?ultra-lowlossswitchinglossesthankstokelvinemitterpin packageincombinationwithhighspeedh3technology ?highefficiencyinhardswitchingandresonanttopologies ?10secshortcircuitwithstandtimeatt vj =175c ?easyparallelingcapabilityduetopositivetemperature coefficientinv ce(sat) ?lowemi ?lowgatechargeq g ?verysoft,fastrecoveryfullcurrentanti-paralleldiode ?maximumjunctiontemperature175c ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?industrialups ?charger ?energystorage ?three-levelsolarstringinverter productvalidation: qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec47/20/22 keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKY40N120CH3 1200v 40a 2v 175c k40mch3 pg-to247-4-2
datasheet 2 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
datasheet 3 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =134c i c 80.0 40.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 160.0 a turn off safe operating area v ce 1200v, t vj 175c, t p =1s - 160.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i f 80.0 40.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 160.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s, d <0.010) v ge 20 30 v short circuit withstand time v ge =15.0v, v cc 600v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =175c t sc 10 s powerdissipation t c =25c powerdissipation t c =134c p tot 500.0 136.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics igbt thermal resistance, junction - case r th(j-c) - - 0.30 k/w diode thermal resistance, junction - case r th(j-c) - - 0.50 k/w thermal resistance junction - ambient r th(j-a) - - 40 k/w
datasheet 4 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1200 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =40.0a t vj =25c t vj =175c - - 2.00 2.50 2.35 - v diode forward voltage v f v ge =0v, i f =40.0a t vj =25c t vj =175c - - 1.90 1.85 2.30 - v gate-emitter threshold voltage v ge(th) i c =1.00ma, v ce = v ge 5.1 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t vj =25c t vj =175c - - - 3000 250 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =40.0a - 14.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2385 - output capacitance c oes - 235 - reverse transfer capacitance c res - 132 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =960v, i c =40.0a, v ge =15v - 190.0 - nc switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 30 - ns rise time t r - 29 - ns turn-off delay time t d(off) - 280 - ns fall time t f - 26 - ns turn-on energy e on - 2.18 - mj turn-off energy e off - 1.30 - mj total switching energy e ts - 3.48 - mj t vj =25c, v cc =600v, i c =40.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =70nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery.
datasheet 5 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 350 - ns diode reverse recovery charge q rr - 3.00 - c diode peak reverse recovery current i rrm - 22.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -188 - a/s t vj =25c, v r =600v, i f =40.0a, di f /dt =600a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 29 - ns rise time t r - 32 - ns turn-off delay time t d(off) - 375 - ns fall time t f - 64 - ns turn-on energy e on - 3.10 - mj turn-off energy e off - 2.50 - mj total switching energy e ts - 5.60 - mj t vj =175c, v cc =600v, i c =40.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =70nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 550 - ns diode reverse recovery charge q rr - 7.50 - c diode peak reverse recovery current i rrm - 30.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -142 - a/s t vj =175c, v r =600v, i f =40.0a, di f /dt =600a/s
datasheet 6 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 450 500 550 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 v ge =20v 17v 15v 13v 11v 9v 7v 5v
datasheet 7 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 140 160 t vj = 25c t vj = 175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c = 20a i c = 40a i c = 80a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g =12 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 50 60 70 80 1 10 100 1000 t d(off) t f t d(on) t r
datasheet 8 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 9. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, i c =40a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 5 10 15 20 25 30 35 40 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =600v, v ge =0/15v, i c =40a, r g =12 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =1ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 1 2 3 4 5 6 7 8 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g =12 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 e off e on e ts
datasheet 9 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 13. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, i c =40a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9 10 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =600v, v ge =0/15v, i c =40a, r g =12 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0 1 2 3 4 5 6 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =0/15v, i c =40a, r g =12 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 450 500 550 600 650 700 750 800 0 1 2 3 4 5 6 7 8 9 10 e off e on e ts figure 16. typicalgatecharge ( i c =40a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 30 60 90 120 150 180 210 0 2 4 6 8 10 12 14 16 v cc =240v v cc =960v
datasheet 10 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 600v, t vj 175c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 11 12 13 14 15 16 17 18 0 30 60 90 120 150 180 210 240 270 300 figure 19. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 600v,startat t vj 175c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 figure 20. igbttransientthermalresistance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 1e-4 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.016055 4.1e-4 2 0.117494 2.8e-3 3 0.15756 0.018313 4 3.3e-3 0.491884 5 3.4e-4 12.38553
datasheet 11 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 21. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 1e-4 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.02668 3.3e-4 2 0.22581 2.7e-3 3 0.24167 0.01549 4 5.3e-3 0.40258 5 3.9e-4 11.77304 figure 22. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 800 t vj = 25c, i f = 40a t vj = 175c, i f = 40a figure 23. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 400 600 800 1000 1200 1400 0 1 2 3 4 5 6 7 8 9 t vj = 25c, i f = 40a t vj = 175c, i f = 40a figure 24. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 400 600 800 1000 1200 1400 0 10 20 30 40 50 60 70 t vj = 25c, i f = 40a t vj = 175c, i f = 40a
datasheet 12 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt figure 25. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 400 600 800 1000 1200 1400 -1000 -875 -750 -625 -500 -375 -250 -125 0 t vj = 25c, i f = 40a t vj = 175c, i f = 40a figure 26. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 160 t vj = 25c t vj = 175c figure 27. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 i f = 20a i f = 40a i f = 80a
datasheet 13 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt pg-to247-4-2 dimension a 23.09.2016 issue date european projection millimeters 1.6 19.8 0.97 0.8 2.54 5.08 min. 2.31 20.9 22.3 0.59 1 4.9 1.16 15.95 1.8 1.57 20.1 21.1 1.35 1.45 22.5 0.66 2.51 5.1 max. 2.29 16.55 0 5 scale 10mm document no. z8b00182798 revision 01 2.55 2.85 a1 b6 b4 c d d1 d2 d3 d4 e e1 h l l1 m 2.16 2:1 package surface route between pin 1 & pin 2 will be 5.1mm min. e a a2 a1 d l e1 e d2 e2 h c b d1 b4 b2 d3 b7 l1 b6 e3 e1 d4 1.9 2.1 a2 1.16 1.29 b 1.36 1.49 b2 n m 2x 1.16 1.65 b7 1 15.7 15.9 e 3.9 4.1 e1 13.1 13.5 e2 2.58 2.78 e3 1 2 3 4 1 2 3 4 3.24 3.44 n 1.9 2.1 r r all b... and c dimensions including plating except area of cutting
datasheet 14 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt pg-to247-4-2 dimension a 23.09.2016 issue date european projection millimeters 1.6 19.8 0.97 0.8 2.54 5.08 min. 2.31 20.9 22.3 0.59 1 4.9 1.16 15.95 1.8 1.57 20.1 21.1 1.35 1.45 22.5 0.66 2.51 5.1 max. 2.29 16.55 0 5 scale 10mm document no. z8b00182798 revision 01 2.55 2.85 a1 b6 b4 c d d1 d2 d3 d4 e e1 h l l1 m 2.16 2:1 package surface route between pin 1 & pin 2 will be 5.1mm min. e a a2 a1 d l e1 e d2 e2 h c b d1 b4 b2 d3 b7 l1 b6 e3 e1 d4 1.9 2.1 a2 1.16 1.29 b 1.36 1.49 b2 n m 2x 1.16 1.65 b7 1 15.7 15.9 e 3.9 4.1 e1 13.1 13.5 e2 2.58 2.78 e3 1 2 3 4 1 2 3 4 3.24 3.44 n 1.9 2.1 r r all b... and c dimensions including plating except area of cutting t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 15 v2.2 2017-06-09 IKY40N120CH3 highspeedswitchingseriesthirdgenerationigbt revisionhistory IKY40N120CH3 revision:2017-06-09,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.1 2017-04-26 final data sheet 2.2 2017-06-09 update figure 26 pg-to247-4-2 dimension a 23.09.2016 issue date european projection millimeters 1.6 19.8 0.97 0.8 2.54 5.08 min. 2.31 20.9 22.3 0.59 1 4.9 1.16 15.95 1.8 1.57 20.1 21.1 1.35 1.45 22.5 0.66 2.51 5.1 max. 2.29 16.55 0 5 scale 10mm document no. z8b00182798 revision 01 2.55 2.85 a1 b6 b4 c d d1 d2 d3 d4 e e1 h l l1 m 2.16 2:1 package surface route between pin 1 & pin 2 will be 5.1mm min. e a a2 a1 d l e1 e d2 e2 h c b d1 b4 b2 d3 b7 l1 b6 e3 e1 d4 1.9 2.1 a2 1.16 1.29 b 1.36 1.49 b2 n m 2x 1.16 1.65 b7 1 15.7 15.9 e 3.9 4.1 e1 13.1 13.5 e2 2.58 2.78 e3 1 2 3 4 1 2 3 4 3.24 3.44 n 1.9 2.1 r r all b... and c dimensions including plating except area of cutting t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
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